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cond-mat.mtrl-sci2023★ 7 cited
Boron-related defects in n-type 4H-SiC Schottky barrier diodes
Tihomir Knežević, Eva Jelavić, Yuichi Yamazaki +3
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy…
cond-mat.mtrl-sci2023★ 19 cited
Theory of shallow and deep boron defects in 4H-SiC
Vitor J. B. Torres, Ivana Capan, José Coutinho
Abstract Despite advances toward improving the quality of -type 4H-SiC substrates and layers, we still have no model capable of accounting for the multitude of boron-related opt…