Acceptor levels of the carbon vacancy in $4H$-SiC: combining Laplace deep level transient spectroscopy with density functional modeling

Ivana Capan, Tomislav Brodar, José Coutinho +3

We provide direct evidence that the broad Z${}_{1/2}$ peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged $4H$-SiC, has two compo…