Wide bandgap semiconductors for radiation detection: A review

Abstract

In this paper, an overview of the wide bandgap (WBG) semiconductors for radiation detection applications is presented. The recent advancements in the fabrication of high-quality wafers have enabled the remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN and \b{eta}-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While \b{eta}-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

References in corpus (3)

• Coherent control of single spins in silicon carbide at room temperature
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Silicon carbide diodes for neutron detection

Cited by in corpus (1)

• 4H-SiC PIN detector for alpha particles from room temperature to 90 °C