Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields

Abstract

The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy (${\mathrm{V}}_{\mathrm{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to the symmetry axis leads to nontrivial behavior caused by dynamical reorientation of the ${\mathrm{V}}_{\mathrm{Si}}$ spin multipole under optical excitation. Particularly, we observe the inversion of the quadrupole spin polarization in the excited state and appearance of the dipole spin polarization in the ground state. The latter is much higher than thermal polarization and cannot be induced solely by optical excitation. Our theoretical calculations reproduce well all sharp features in the spin resonance spectra, and shine light on the complex dynamics of spin multipoles in these kinds of solid-state systems.

6 pages, 4 figures

References in corpus (9)

• Coherent control of single spins in silicon carbide at room temperature
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Optical thermometry based on level anticrossing in silicon carbide
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature
• Stress-controlled zero-field spin splitting in silicon carbide
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer