activity
20202026
most citedEntanglement and control of single quantum memories in isotopically engineered silicon carbide

207 citations · 847 across the 26 of their papers we have counts for

collaborators

27 papers

quant-ph2026

Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions

Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal +5

A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with…

quant-ph2026

Spectator-transition crosstalk in a spin-3/2 silicon-vacancy qudit in silicon carbide revealed by broadband Ramsey interferometry

Jun-Jae Choi, Seung-Jae Hwang, Seoyoung Paik +9

Color-center spins in 4H-SiC offer a rare combination of wafer-scale materials maturity with long spin coherence and chip-level photonics, making them promising building blocks for…

quant-ph2025

Localization and coherent control of 25 nuclear spins in Silicon Carbide

Pierre Kuna, Erik Hesselmeier-Hüttmann, Phillip Schillinger +7

Optically addressable spin defects are excellent candidate platform for quantum sensing and quantum network. Nuclear spins coupled to color centers naturally enable long lived quan…

quant-ph2025

Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout

Marcel Krumrein, Julian M. Bopp, Timo Steidl +5

Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters…

quant-ph2025

Broadband Fourier transform spectroscopy of quantum emitters photoluminescence with sub-nanosecond temporal resolution

Issam Belgacem, Pasquale Cilibrizzi, Muhammad Junaid Arshad +15

The spectral characterization of quantum emitter luminescence over broad wavelength ranges and fast timescales is important for applications ranging from biophysics to quantum tech…

quant-ph2025★ 1 cited

Mesoscopic cavity quantum electrodynamics with phase-disordered emitters in a Kerr nonlinear resonator

Daniil M. Lukin, Bennet Windt, Miguel Bello +13

The field of cavity quantum electrodynamics (QED) has seen a recent resurgence of interest in few- and many-body physics owing to the realization that the breaking of symmetries an…

quant-ph2025★ 2 cited

Minute-long quantum coherence enabled by electrical depletion of magnetic noise

Cyrus Zeledon, Benjamin Pingault, Jonathan C. Marcks +13

Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor tech…

quant-ph2025★ 11 cited

Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity

Jannis Hessenauer, Jonathan Körber, Misagh Ghezellou +5

Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate fo…

quant-ph2024★ 1 cited

Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature

Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann +10

Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature…

cond-mat.mtrl-sci2024

Effective uniaxial dielectric function tensor and optical phonons in ()-plane oriented -GaO films with equally-distributed six-fold rotation domains

Alyssa Mock, Steffen Richter, Alexis Papamichail +11

Monoclinic -GaO films grown on -plane sapphire have been shown to exhibit six -plane oriented domains, which are equally-spaced-by-rotation around the su…

quant-ph2024★ 17 cited

Precise characterization of a silicon carbide waveguide fiber interface

Marcel Krumrein, Raphael Nold, Flavie Davidson-Marquis +13

Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into effic…

quant-ph2024★ 1 cited

High fidelity optical readout of a nuclear spin qubit in Silicon Carbide

Erik Hesselmeier, Oliver von Berg, Pierre Kuna +7

Quantum state readout is a key requirement for a successful qubit platform. In this work we demonstrate a high fidelity quantum state readout of a V2 center nuclear spin based on a…

quant-ph2023★ 14 cited

Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide

Erik Hesselmeier, Pierre Kuna, István Takács +8

Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environme…

quant-ph2023★ 18 cited

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Jonah Heiler, Jonathan Körber, Erik Hesselmeier +9

Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising…

quant-ph2023★ 6 cited

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Di Liu, Florian Kaiser, Vladislav Bushmakin +7

The negatively-charged silicon vacancy center () in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication,…

quant-ph2023★ 35 cited

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot +11

Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencie…

quant-ph2022★ 12 cited

Characterization of single shallow silicon-vacancy centers in 4H-SiC

Harpreet Singh, Mario Alex Hollberg, Misagh Ghezellou +3

Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) ha…

quant-ph2022★ 19 cited

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Naoya Morioka, Di Liu, Öney O. Soykal +8

Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integrati…

physics.optics2022★ 9 cited

Broadband single-mode planar waveguides in monolithic 4H-SiC

Tom Bosma, Joop Hendriks, Misagh Ghezellou +3

Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and com…

quant-ph2022★ 6 cited

Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

Daniil M. Lukin, Melissa A. Guidry, Joshua Yang +6

An outstanding challenge for color center-based quantum information processing technologies is the integration of optically-coherent emitters into scalable thin-film photonics. Her…

quant-ph2021

Five-second coherence of a single spin with single-shot readout in silicon carbide

Christopher P. Anderson, Elena O. Glen, Cyrus Zeledon +11

An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot re…

quant-ph2021★ 197 cited

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Charles Babin, Rainer Stöhr, Naoya Morioka +19

Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication,…

quant-ph2021★ 25 cited

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Roland Nagy, Durga Bhaktavatsala Rao Dasari, Charles Babin +13

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing applicati…

quant-ph2020★ 207 cited

Entanglement and control of single quantum memories in isotopically engineered silicon carbide

Alexandre Bourassa, Christopher P. Anderson, Kevin C. Miao +9

Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in sil…