activity
20212026
most citedUltra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

35 citations · 141 across the 14 of their papers we have counts for

collaborators

15 papers

quant-ph2026

Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions

Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal +5

A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with…

quant-ph2025★ 1 cited

Mesoscopic cavity quantum electrodynamics with phase-disordered emitters in a Kerr nonlinear resonator

Daniil M. Lukin, Bennet Windt, Miguel Bello +13

The field of cavity quantum electrodynamics (QED) has seen a recent resurgence of interest in few- and many-body physics owing to the realization that the breaking of symmetries an…

quant-ph2025★ 2 cited

Minute-long quantum coherence enabled by electrical depletion of magnetic noise

Cyrus Zeledon, Benjamin Pingault, Jonathan C. Marcks +13

Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor tech…

quant-ph2025★ 11 cited

Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity

Jannis Hessenauer, Jonathan Körber, Misagh Ghezellou +5

Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate fo…

quant-ph2024★ 1 cited

Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature

Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann +10

Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature…

cond-mat.mtrl-sci2024

Effective uniaxial dielectric function tensor and optical phonons in ()-plane oriented -GaO films with equally-distributed six-fold rotation domains

Alyssa Mock, Steffen Richter, Alexis Papamichail +11

Monoclinic -GaO films grown on -plane sapphire have been shown to exhibit six -plane oriented domains, which are equally-spaced-by-rotation around the su…

quant-ph2024★ 6 cited

Quantum communication networks with defects in silicon carbide

Philipp Sohr, Philipp Koller, Sebastian Ecker +23

Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…

quant-ph2024★ 1 cited

High fidelity optical readout of a nuclear spin qubit in Silicon Carbide

Erik Hesselmeier, Oliver von Berg, Pierre Kuna +7

Quantum state readout is a key requirement for a successful qubit platform. In this work we demonstrate a high fidelity quantum state readout of a V2 center nuclear spin based on a…

quant-ph2023★ 14 cited

Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide

Erik Hesselmeier, Pierre Kuna, István Takács +8

Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environme…

quant-ph2023★ 18 cited

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Jonah Heiler, Jonathan Körber, Erik Hesselmeier +9

Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising…

quant-ph2023★ 35 cited

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot +11

Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencie…

quant-ph2022★ 12 cited

Characterization of single shallow silicon-vacancy centers in 4H-SiC

Harpreet Singh, Mario Alex Hollberg, Misagh Ghezellou +3

Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) ha…

physics.optics2022★ 9 cited

Broadband single-mode planar waveguides in monolithic 4H-SiC

Tom Bosma, Joop Hendriks, Misagh Ghezellou +3

Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and com…

quant-ph2022★ 6 cited

Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

Daniil M. Lukin, Melissa A. Guidry, Joshua Yang +6

An outstanding challenge for color center-based quantum information processing technologies is the integration of optically-coherent emitters into scalable thin-film photonics. Her…

quant-ph2021★ 25 cited

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Roland Nagy, Durga Bhaktavatsala Rao Dasari, Charles Babin +13

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing applicati…