Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Abstract

Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks.

29 pages, 20 figures, 2 tables

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Cited by in corpus (7)

• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
• Quantum enhanced electric field mapping within semiconductor devices
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
• Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
• Orbitally resolved single-photon emission from an individual atomic vacancy center in a semiconductor