activity
20202025
most citedUltra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

35 citations · 121 across the 11 of their papers we have counts for

collaborators

11 papers

quant-ph2025★ 1 cited

Strain-enabled control of the vanadium qudit in silicon carbide

Philipp Koller, Thomas Astner, Benedikt Tissot +2

Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semic…

quant-ph2024★ 7 cited

Entanglement generation using single-photon pulse reflection in realistic networks

Ferdinand Omlor, Benedikt Tissot, Guido Burkard

A general entanglement generation protocol between remote stationary qubits using single-photon reflection in a photonic network is explored theoretically. The nodes of the network…

quant-ph2024

Extended spin relaxation times of optically addressed telecom defects in silicon carbide

Jonghoon Ahn, Christina Wicker, Nolan Bitner +7

Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived…

quant-ph2024★ 6 cited

Quantum communication networks with defects in silicon carbide

Philipp Sohr, Philipp Koller, Sebastian Ecker +23

Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…

cond-mat.mes-hall2023★ 2 cited

Strain Engineering for Transition Metal Defects in SiC

Benedikt Tissot, Péter Udvarhelyi, Adam Gali +1

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optica…

quant-ph2023★ 2 cited

Reservoir Engineering for Classical Nonlinear Fields

Benedikt Tissot, Hugo Ribeiro, Florian Marquardt

Reservoir engineering has become a prominent tool to control quantum systems. Recently, there have been first experiments applying it to many-body systems, especially with a view t…

quant-ph2023★ 35 cited

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot +11

Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencie…

quant-ph2022★ 11 cited

Efficient High-Fidelity Flying Qubit Shaping

Benedikt Tissot, Guido Burkard

Matter qubit to traveling photonic qubit conversion is the cornerstone of numerous quantum technologies such as distributed quantum computing, as well as several quantum internet a…

cond-mat.mes-hall2022★ 22 cited

Nuclear Spin Quantum Memory in Silicon Carbide

Benedikt Tissot, Michael Trupke, Philipp Koller +2

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom b…

cond-mat.mes-hall2021★ 20 cited

Hyperfine Structure of Transition Metal Defects in SiC

Benedikt Tissot, Guido Burkard

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in the telecom band. We develop a the…

cond-mat.mes-hall2020★ 15 cited

Spin Structure and Resonant Driving of Spin-1/2 Defects in SiC

Benedikt Tissot, Guido Burkard

Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects a…