Hyperfine Structure of Transition Metal Defects in SiC

Abstract

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in the telecom band. We develop a theory for the interaction of an active electron in the $D$-shell of a TM defect in SiC with the TM nuclear spin and derive the effective hyperfine tensor within the Kramers doublets formed by the spin-orbit coupling. Based on our theory we discuss the possibility to exchange the nuclear and electron states with potential applications for nuclear spin manipulation and long-lived nunclear-spin based quantum memories.

arXiv comment5 pages, 4 figures

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Cited by in corpus (6)

• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
• Nuclear Spin Quantum Memory in Silicon Carbide
• Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
• Simulating optically-active spin defects with a quantum computer
• Nuclear spin relaxation in solid state defect quantum bits via electron-phonon coupling in their optical excited state
• Qubit-qudit entanglement transfer in defect centers with high-spin nuclei