99.992 % ${}^{28}$Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Abstract

Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant ${}^{28}$silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown ${}^{28}$silicon epitaxial layers (epilayers) with an isotopic purity greater than 99.992 % on 300mm natural abundance silicon crystals. The quality of the mono-crystalline isotopically purified epilayer conforms to the same drastic quality requirements as the natural epilayers used in our pre-industrial CMOS facility. The isotopically purified substrates are now ready for the fabrication of silicon qubits using a state-of-the-art 300 mm Si CMOS-foundries equipment and processes

arXiv comment7 pages, 7 figures

References in corpus (10)

• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• Electron spin coherence exceeding seconds in high purity silicon
• Storing quantum information for 30 seconds in a nanoelectronic device
• A CMOS silicon spin qubit
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• An all silicon quantum computer
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• Device fabrication and transport measurements of FinFETs built with ${}^{28}$Si SOI wafers towards donor qubits in silicon

Cited by in corpus (17)

• Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
• Quantum Dot Arrays in Silicon and Germanium
• Cavity-enhanced quantum network nodes
• Detection of single W-centers in silicon
• A silicon quantum-dot-coupled nuclear spin qubit
• Narrow optical transitions in erbium-implanted silicon waveguides
• Quantum transport properties of industrial ${}^{28}$Si/${}^{28}$SiO${}_2$
• Semiconductor materials stacks for quantum dot spin qubits
• Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
• Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
• Erbium emitters in commercially fabricated nanophotonic silicon waveguides
• Hyperfine Structure of Transition Metal Defects in SiC
• Geometry of the dephasing sweet spots of spin-orbit qubits
• Isotopic enrichment of silicon by high fluence ${}^{28}$Si${}^{-}$ ion implantation
• Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls
• Single G centers in silicon fabricated by co-implantation with carbon and proton
• A silicon spin vacuum: isotopically enriched ${}^{28}$silicon-on-insulator and ${}^{28}$silicon from ultra-high fluence ion implantation