Erbium emitters in commercially fabricated nanophotonic silicon waveguides

Abstract

Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as they combine optical transitions in the telecommunications frequency band with the potential for second-long coherence time. Here we show that these emitters can be reliably integrated into commercially fabricated low-loss waveguides. We investigate several integration procedures and obtain ensembles of many emitters with an inhomogeneous broadening of < 2 GHz and a homogeneous linewidth of < 30 kHz. We further observe the splitting of the electronic spin states in a magnetic field up to 9 T that freezes paramagnetic impurities. Our findings are an important step towards long-lived quantum memories that can be fabricated on a wafer-scale using CMOS technology.

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Cited by in corpus (7)

• Optical single-shot readout of spin qubits in silicon
• Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon
• Luminescence thermometry based on photon emitters in nanophotonic silicon waveguides
• Spectral stability of cavity-enhanced single-photon emitters in silicon
• Erbium Quantum Memory Platform with Long Optical Coherence via Back-End of Line Deposition on Foundry-Fabricated Photonics
• Integration of ${\text{Er}}^{3+}$-emitters in silicon-on-insulator nanodisks metasurface
• Coherent response of inhomogeneously broadened and spatially localized emitter ensembles in waveguide QED