All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Abstract

Silicon is the most scalable optoelectronic material, and it has revolutionized our lives in many ways. The prospect of quantum optics in silicon is an exciting avenue because it has the potential to address the scaling and integration challenges, the most pressing questions facing quantum science and technology. We report the first all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. We observe a more than 30-fold enhancement of luminescence, a near unity atom-cavity coupling efficiency, and an 8-fold acceleration of the emission from the quantum center. Our work opens avenues for large-scale integrated all-silicon cavity quantum electrodynamics and quantum photon interfaces with applications in quantum communication, sensing, imaging, and computing.

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Cited by in corpus (23)

• Cavity-coupled telecom atomic source in silicon
• Cavity enhanced emission from a silicon T center
• High-efficiency single photon emission from a silicon T-center in a nanobeam
• Optical single-shot readout of spin qubits in silicon
• Polarization dynamics of solid-state quantum emitters
• Erbium emitters in commercially fabricated nanophotonic silicon waveguides
• Purcell enhancement of silicon W centers in circular Bragg grating cavities
• Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
• Genuine and faux single G centers in carbon-implanted silicon
• Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation
• Room-temperature photonic quantum computing in integrated silicon photonics with germanium-silicon single-photon avalanche diodes
• Nanocavity enhanced photon coherence of solid-state quantum emitters operating up to 30 K
• Bright and Purcell-enhanced single photon emission from a silicon G center
• Laser-induced spectral diffusion and excited-state mixing of silicon T centres
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
• Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
• Many-Body Entanglement in Solid-State Emitters
• Spectral stability of cavity-enhanced single-photon emitters in silicon
• Multipartite entanglement distribution in a topological photonic network
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
• Spin-photon Qubits for Scalable Quantum Network
• Mechanisms and Opportunities for Tunable High-Purity Single Photon Emitters: A Review of Hybrid Perovskites and Prospects for Bright Squeezed Vacuum