74 citations · 167 across the 10 of their papers we have counts for
11 papers
Inverse-Designed Nanobeam Cavities for High-Cooperativity Spin-Photon Interfaces in Silicon
Nail Letty, Md Sakibul Islam, Wayesh Qarony
Telecom-band spin defects in silicon offer a compelling platform for integrated quantum networks by combining scalable silicon photonics with spin-based quantum memories and multiq…
Spin-photon Qubits for Scalable Quantum Network
Md Sakibul Islam, Kuldeep Singh, Yunhe Zhao +2
Solid-state quantum light sources offer a scalable pathway for interfacing stationary spin qubits with flying photonic qubits, forming the backbone of future quantum networks. Tele…
Interpretable inverse-designed cavity for on-chip nonlinear and quantum optics
Zhetao Jia, Wayesh Qarony, Jagang Park +9
Inverse design is a powerful tool in wave-physics and in particular in photonics for compact, high-performance devices. To date, applications have mostly been limited to linear sys…
Programmable quantum emitter formation in silicon
K. Jhuria, V. Ivanov, D. Polley +12
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long sp…
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine +8
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have exp…
All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
Walid Redjem, Yertay Zhiyenbayev, Wayesh Qarony +10
Silicon is the most scalable optoelectronic material, and it has revolutionized our lives in many ways. The prospect of quantum optics in silicon is an exciting avenue because it h…
Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers
Vsevolod Ivanov, Jacopo Simoni, Yeonghun Lee +10
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers…
Avalanche Photodetectors with Photon Trapping Structures for Biomedical Imaging Applications
Cesar Bartolo-Perez, Soroush Ghandiparsi, Ahmed S. Mayet +8
Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imagi…
Maximizing absorption in photon trapping ultra-fast silicon photodetectors
Cesar Bartolo-Perez, Wayesh Qarony, Soroush Ghandiparsi +9
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Rang…
Single Microhole per Pixel in CMOS Image Sensor with Enhanced Optical Sensitivity in Near-Infrared
E. Ponizovskaya Devine, Wayesh Qarony, Ahasan Ahamed +7
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the opti…
Excitation Wavelength Dependent Reversible Photoluminescence Peak in Iodide Perovskites
Wayesh Qarony, Mohammad Kamal Hossain, Mohammad Ismail Hossain +8
Halide perovskites have indisputably exceptional optical and electronic properties, which are attractive for next-generation optoelectronic device technologies. We report on a reve…