Indistinguishable photons from an artificial atom in silicon photonics

Abstract

Silicon is the ideal material for building electronic and photonic circuits at scale. Spin qubits and integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources, two-photon gates, and spin-photon interfaces in silicon poses a major challenge to scalability. In this work, we show a new type of indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source highly coherent single photons suitable for photonic quantum networks and processors.

10 pages, 9 figures

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Cited by in corpus (16)

• All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
• Cavity-coupled telecom atomic source in silicon
• Polarization dynamics of solid-state quantum emitters
• Acceptor-induced bulk dielectric loss in superconducting circuits on silicon
• Electrically-triggered spin-photon devices in silicon
• Bright and Purcell-enhanced single photon emission from a silicon G center
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
• Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
• Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
• Low-noise Optomechanical Single Phonon-photon Conversion for Quantum Networks
• Spectral stability of cavity-enhanced single-photon emitters in silicon
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
• Radiative electronic bound states in the continuum from defects in semiconductors
• Photon correlation Fourier spectroscopy of a B center in hBN
• Spin-photon Qubits for Scalable Quantum Network