Acceptor-induced bulk dielectric loss in superconducting circuits on silicon

Abstract

The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLS). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In this work, we show that boron acceptors in silicon constitute a strongly coupled TLS bath for superconducting circuits. We discuss how the electronic structure of boron acceptors leads to an effective TLS response in silicon. We sweep the boron concentration in silicon and demonstrate the bulk dielectric loss limit from boron acceptors. We show that boron-induced dielectric loss can be reduced in a magnetic field due to the spin-orbit structure of boron. This work provides the first detailed microscopic description of a TLS bath for superconducting circuits, and demonstrates the need for ultrahigh purity substrates for next-generation superconducting quantum processors.

References in corpus (45)

• Supplementary information for "Quantum supremacy using a programmable superconducting processor"
• Cavity Optomechanics
• Suppressing quantum errors by scaling a surface code logical qubit
• Optomechanical Crystals
• Decoherence in Josephson Qubits from Dielectric Loss
• Coherent Josephson qubit suitable for scalable quantum integrated circuits
• Hartree-Fock on a superconducting qubit quantum computer
• Storing quantum information for 30 seconds in a nanoelectronic device
• New material platform for superconducting transmon qubits with coherence times exceeding 0.3 milliseconds
• Towards understanding two-level-systems in amorphous solids -- Insights from quantum circuits
• A Coherent Spin-Photon Interface in Silicon
• Experimental evidence for a surface distribution of two-level systems in superconducting lithographed microwave resonators
• Surface participation and dielectric loss in superconducting qubits
• High Kinetic Inductance Superconducting Nanowire Resonators for Circuit QED in a Magnetic Field
• Atomic clock transitions in silicon-based spin qubits
• Materials loss measurements using superconducting microwave resonators
• Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates
• Feedback control of a solid-state qubit using high-fidelity projective measurement
• Heralded state preparation in a superconducting qubit
• Thermal and Residual Excited-State Population in a 3D Transmon Qubit
• Determining interface dielectric losses in superconducting coplanar waveguide resonators
• Single artificial atoms in silicon emitting at telecom wavelengths
• A silicon-integrated telecom photon-spin interface
• Investigating surface loss effects in superconducting transmon qubits
• Suppression of 1/f noise in solid state quantum devices by surface spin desorption
• Direct identification of dilute surface spins on Al${}_2$O${}_3$: Origin of flux noise in quantum circuits
• Disentangling Losses in Tantalum Superconducting Circuits
• Engineering long spin coherence times of spin-orbit systems
• Projected dipole moments of individual two-level defects extracted using circuit quantum electrodynamics
• Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators
• Resolving the positions of defects in superconducting quantum bits
• Charge-insensitive single-atom spin-orbit qubit in silicon
• Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
• On-chip cavity quantum phonodynamics with an acceptor qubit in silicon
• Strain-induced spin resonance shifts in silicon devices
• Precision measurement of the microwave dielectric loss of sapphire in the quantum regime with parts-per-billion sensitivity
• Indistinguishable photons from an artificial atom in silicon photonics
• Quantum Computing with Acceptor Spins in Silicon
• Phonon engineering of atomic-scale defects in superconducting quantum circuits
• Analytical determination of participation in superconducting coplanar architectures
• Measuring effective temperatures of qubits using correlations
• Compact vacuum gap transmon qubits: Selective and sensitive probes for superconductor surface losses
• Acceptor-based qubit in silicon with tunable strain
• Manipulation and decoherence of acceptor charge qubit in silicon
• Loss and decoherence in superconducting circuits on silicon: Insights from electron spin resonance

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