Manipulation and decoherence of acceptor charge qubit in silicon

Abstract

Dielectric constant and absorption measurements on boron doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant ac electric field and the Stark tuning of level spacing with an external DC electric field. The relatively longer decoherence times were observed by the electric echo measurement in a low boron dopant concentration Si sample. The scalable acceptor-based system is a promising candidate of the charge qubit for quantum computing.

This paper has been withdrawn by the author due to a crucial sign error in equation 1 This paper has been withdrawn by the author due to major revision

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• Spins in few-electron quantum dots
• Experimental evidence for a surface distribution of two-level systems in superconducting lithographed microwave resonators
• Microwave Dielectric Loss at Single Photon Energies and milliKelvin Temperatures
• Temperature Dependence of the Frequency and Noise of Superconducting Coplanar Waveguide Resonators

Cited by in corpus (5)

• Engineering long spin coherence times of spin-orbit systems
• Charge-insensitive single-atom spin-orbit qubit in silicon
• On-chip cavity quantum phonodynamics with an acceptor qubit in silicon
• Quantum Computing with Acceptor Spins in Silicon
• Acceptor-induced bulk dielectric loss in superconducting circuits on silicon