Engineering long spin coherence times of spin-orbit systems

Abstract

Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim 1\mu$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled "generalised spin" with total angular momentum $J=\frac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained ${}^{28}\mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in ${}^{28}\mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9\mathrm{ms}$ Hahn-echo and $9\mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=\frac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances.

arXiv comment14 pages, 4 figures + 13 pages, 5 figures of Supplemental material

References in corpus (27)

• Quantum Simulation
• A generic new platform for topological quantum computation using semiconductor heterostructures
• Hybrid quantum circuits: Superconducting circuits interacting with other quantum systems
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• Solid-state electronic spin coherence time approaching one second
• Electron spin coherence exceeding seconds in high purity silicon
• Spin-orbit qubit in a semiconductor nanowire
• Storing quantum information for 30 seconds in a nanoelectronic device
• A CMOS silicon spin qubit
• Quantum CNOT Gate for Spins in Silicon
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• A Coherent Spin-Photon Interface in Silicon
• Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
• Spin relaxation and decoherence of holes in quantum dots
• Fast two-qubit logic with holes in germanium
• Ge hole spin qubit
• Coherent control and suppressed nuclear feedback of a single quantum dot hole qubit
• Coupling a single electron spin to a microwave resonator: Controlling transverse and longitudinal couplings
• Charge-insensitive single-atom spin-orbit qubit in silicon
• On-chip cavity quantum phonodynamics with an acceptor qubit in silicon
• Spin-orbit dynamics of single acceptor atoms in silicon
• Spin Density Matrix of Spin-3/2 Hole Systems
• Amplified and tunable transverse and longitudinal spin-photon coupling in hybrid circuit-QED
• Isotope effect on electron paramagnetic resonance of boron acceptors in silicon
• Entanglement control and magic angles for acceptor qubits in Si
• Manipulation and decoherence of acceptor charge qubit in silicon

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