activity
20152026
most citedEngineering long spin coherence times of spin-orbit systems

72 citations · 259 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2026

The effect of the A-site cation on the phase transition temperature of metal halide perovskites

Tom Braeckevelt, Sander Vandenhaute, Sven M. J. Rogge +2

A key challenge for the practical application of metal halide perovskites (MHPs) is the instability of the desired perovskite phase relative to the optically non-active phase.…

quant-ph2025★ 20 cited

Roadmap on Atomic-scale Semiconductor Devices

Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…

cond-mat.mes-hall2021★ 31 cited

Valley interference and spin exchange at the atomic scale in silicon

B. Voisin, J. Bocquel, A. Tankasala +6

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silico…

cond-mat.mes-hall2018★ 72 cited

Engineering long spin coherence times of spin-orbit systems

T. Kobayashi, J. Salfi, J. van der Heijden +12

Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photo…

cond-mat.mes-hall2018★ 63 cited

Single-shot single-gate RF spin readout in silicon

P. Pakkiam, A. V. Timofeev, M. G. House +5

For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the exist…

cond-mat.mtrl-sci2016★ 55 cited

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

Muhammad Usman, Juanita Bocquel, Joe Salfi +6

The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically…

cond-mat.mes-hall2015★ 18 cited

Spatially resolved resonant tunneling on single atoms in silicon

B. Voisin, J. Salfi, J. Bocquel +2

The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the…