88 citations · 265 across the 11 of their papers we have counts for
11 papers
Room temperature Purcell enhanced single erbium ions in silicon-carbide-on-insulator microring resonators
Joshua Bader, Shin-ichiro Sato, Jeffrey C. McCallum +8
Spin-carrying single-photon emitters operating in the telecommunication C-band (1530-1565nm) are prime candidates for integrated spin-photon interfaces, offering seamless compatibi…
Electrically detected magnetic resonance of As magnetic clock transitions in silicon
Ravi Acharya, Shao Qi Lim, Brett C. Johnson +9
Magnetic clock transitions (CTs), defined by vanishing first-order sensitivity of the transition frequency to magnetic field fluctuations, provide a powerful route to suppress deco…
A silicon spin vacuum: isotopically enriched silicon-on-insulator and silicon from ultra-high fluence ion implantation
Shao Qi Lim, Brett C. Johnson, Sergey Rubanov +7
Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring Si which has a non-zero nuclear spin. Ultra-high fluence $^{28…
In-situ Investigation of the Phase Formation and Superconductivity in VSi Thin Films at High Temperatures
Manjith Bose, David L. Cortie, Sergey Rubanov +3
Vanadium silicide (VSi) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the res…
Latched Detection of Zeptojoule Spin Echoes with a Kinetic Inductance Parametric Oscillator
Wyatt Vine, Anders Kringhøj, Mykhailo Savytskyi +6
When strongly pumped at twice their resonant frequency, non-linear resonators develop a high-amplitude intracavity field, a phenomenon known as parametric self-oscillations. The bo…
Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon
Alexander M. Jakob, Simon G. Robson, Hannes R. Firgau +8
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes…
Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
Alexander M. Jakob, Simon G. Robson, Vivien Schmitt +9
The attributes of group-V-donor spins implanted in an isotopically purified Si crystal make them attractive qubits for large-scale quantum computer devices. Important featur…
Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors
D. A. Broadway, B. C. Johnson, M. S. J. Barson +12
The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, whic…
Engineering long spin coherence times of spin-orbit systems
T. Kobayashi, J. Salfi, J. van der Heijden +12
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photo…
Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers
B. C. Johnson, J. C. McCallum
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profil…
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
B. C. Johnson, J. C. McCallum, L. H. Willems van Beveren +1
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors fo…