88 citations · 265 across the 11 of their papers we have counts for
5 papers · 1 filter
A silicon spin vacuum: isotopically enriched silicon-on-insulator and silicon from ultra-high fluence ion implantation
Shao Qi Lim, Brett C. Johnson, Sergey Rubanov +7
Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring Si which has a non-zero nuclear spin. Ultra-high fluence $^{28…
Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon
Alexander M. Jakob, Simon G. Robson, Hannes R. Firgau +8
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes…
Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors
D. A. Broadway, B. C. Johnson, M. S. J. Barson +12
The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, whic…
Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers
B. C. Johnson, J. C. McCallum
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profil…
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
B. C. Johnson, J. C. McCallum, L. H. Willems van Beveren +1
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors fo…