Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon

Abstract

Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate and integrate multiple strategies to manufacture scale-up donor-based quantum computers. We use ${}^{31}$PF${}_2$ molecule implants to triple the placement certainty compared to ${}^{31}$P ions, while attaining 99.99% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as ${}^{123}$Sb and ${}^{209}$Bi, which represent high-dimensional qudits for quantum information processing, while Sb${}_2$ molecules enable deterministic formation of closely-spaced qudits. We demonstrate the deterministic formation of regular arrays of donor atoms with 300nm spacing, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon.

arXiv comment11 pages, 6 figures, 2 tables

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Cited by in corpus (5)

• Schrödinger cat states of a nuclear spin qudit in silicon
• Roadmap on Atomic-scale Semiconductor Devices
• Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits
• Scalable entanglement of nuclear spins mediated by electron exchange
• Annual-modulation fingerprint of the axion wind induced sideband triplet in quantum dot spin qubit sensors