output
20002026
most citedNanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

197 citations

31 papers

quant-ph2026★ 1 cited

Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes

Jannik H. Schwarberg, Fabian Magerl, Susanne Beuer +11

Silicon vacancies () in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor p…

quant-ph2025

Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout

Marcel Krumrein, Julian M. Bopp, Timo Steidl +5

Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters…

quant-ph2025

Robust Spin Polarization by Adiabatic Dynamical Decoupling

Soham Pal, Oliver T. Whaites, Wolfgang Knolle +2

High-fidelity multi-qubit initialization is vital for quantum simulation, quantum information processing (QIP), and quantum sensing. In diamond platforms, nuclear spin registers ca…

quant-ph2025★ 20 cited

Roadmap on Atomic-scale Semiconductor Devices

Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…

quant-ph2025★ 11 cited

Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity

Jannis Hessenauer, Jonathan Körber, Misagh Ghezellou +5

Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate fo…

quant-ph2024★ 10 cited

Quantum enhanced electric field mapping within semiconductor devices

D. Scheller, F. Hrunski, J. H. Schwarberg +7

Semiconductor components based on silicon carbide (SiC) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields…