Ion Implantation for Deterministic Single Atom Devices

Abstract

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

References in corpus (16)

• Single-shot readout of an electron spin in silicon
• High-fidelity readout and control of a nuclear spin qubit in silicon
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Deterministic coupling of a single nitrogen vacancy center to a photonic crystal cavity
• Charge-based quantum computing using single donors in semiconductors
• Efficient readout of a single spin state in diamond via spin-to-charge conversion
• Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach
• Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond
• Theory of one and two donors in Silicon
• Robust two-qubit gates for donors in silicon controlled by hyperfine interactions
• On-chip cavity quantum phonodynamics with an acceptor qubit in silicon
• Coherent electron transport by adiabatic passage in an imperfect donor chain
• Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes
• Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
• Single ion implantation for single donor devices using Geiger mode detectors
• Strategies for triple-donor devices fabricated by ion implantation

Cited by in corpus (13)

• Donor spins in silicon for quantum technologies
• Topological quantum optics using atom-like emitter arrays coupled to photonic crystals
• Quantum micro-nano devices fabricated in diamond by femtosecond laser and ion irradiation
• Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
• Roadmap on Atomic-scale Semiconductor Devices
• Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
• Mechanism of electron-beam manipulation of single dopant atoms in silicon
• Directional Detection of Dark Matter Using Solid-State Quantum Sensing
• Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon
• Transition metal impurities in Silicon: Computational search for a semiconductor qubit
• Properties of donor qubits in ZnO formed by indium ion implantation
• Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
• Metalens formed by structured arrays of atomic emitters