Ion Implantation for Deterministic Single Atom Devices

Abstract

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

References in corpus (6)

• Efficient readout of a single spin state in diamond via spin-to-charge conversion
• Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond
• Coherent electron transport by adiabatic passage in an imperfect donor chain
• Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes
• Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
• Strategies for triple-donor devices fabricated by ion implantation