activity
20082024
most citedObservation of a Fractional Quantum Hall State at in a Wide GaAs Quantum Well

73 citations · 272 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2024

Dephasing and error dynamics affecting a singlet-triplet qubit during coherent spin shuttling

Natalie D. Foster, Jacob D. Henshaw, Martin Rudolph +2

Quantum information transport over micron to millimeter scale distances is critical for the operation of practical quantum processors based on spin qubits. One method of achieving…

quant-ph2022

The remarkable prospect for quantum-dot-coupled tin qubits in silicon

Wayne M. Witzel, Jesse J. Lutz, Dwight R. Luhman

Spin- Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic w…

cond-mat.mtrl-sci2022

Thermal activation of low-density Ga implanted in Ge

Natalie D. Foster, Andrew J. Miller, Troy A. Hutchins-Delgado +4

The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on…

cond-mat.mes-hall2021★ 8 cited

Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots

Andrew J. Miller, Mitchell Brickson, Will J. Hardy +6

Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quant…

cond-mat.mes-hall2021★ 47 cited

A silicon singlet-triplet qubit driven by spin-valley coupling

Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph +3

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-…

cond-mat.mes-hall2018★ 29 cited

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells

Will J. Hardy, C. Thomas Harris, Yi-Hsin Su +6

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platf…