Observation of a Fractional Quantum Hall State at $\nu =1/4$ in a Wide GaAs Quantum Well

Abstract

We report the observation of an even-denominator fractional quantum Hall (FQH) state at $\nu =1/4$ in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of $n_e=2.55\times 10^{11}$ cm${}^{-2}$. We have performed transport measurements at $T\sim 35$ mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at $\nu =1/4$. Upon tilting the sample to an angle of $\theta =20.3^o$ a clear FQH state at emerges at $\nu =1/4$ with a plateau in the Hall resistance and a strong minimum in the diagonal resistance.

Accepted for publication in Phys. Rev. Lett

References in corpus (1)

• Experimental studies of the fractional quantum Hall effect in the first excited Landau level

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