Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier

Abstract

We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle barrier such that the interlayer tunneling is negligibly small. By using independent-layer contacts we measure the transport tensor \r{ho}_xx and \r{ho}_xy that are solely from the InAs layer, while sweeping p in the InGaSb layer. We found a strongly enhanced resistive scattering signal as the carrier densities approach a total charge neutrality, n = p, which cannot be described by the Fermi-liquid theory. Results of data analysis for density, temperature, and magnetic field dependences are consistent with the emergence of excitonic coupling between the two layers, stressing the dominance of Coulomb interaction even in the presence of disorder.

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Cited by in corpus (9)

• In-plane magnetic field induced density wave states near quantum spin Hall phase transitions
• Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers I: Transport properties
• Interaction-induced crossover between weak anti-localization and weak localization in a disordered InAs/GaSb double quantum well
• Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers II: Zero-field topological superconductivity
• Dissipationless Spin-Charge Conversion in Excitonic Pseudospin Superfluid
• Exciton Condensation in Landau Levels of Quantum Spin Hall Insulators
• Antiparticle of exciton in semimetals
• Helicoidal excitonic phase in an electron-hole double layer system
• Realization of independent contacts in barrier-separated InAs/GaSb quantum wells