Realization of independent contacts in barrier-separated InAs/GaSb quantum wells
arXiv:2303.06621 · doi:10.1063/5.0133795
Abstract
InAs/GaSb double quantum wells (QWs) separated by a 100 Å AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface Fermi level pinning position in InAs for realizing independent electric contacts to each well. In particular, separate ohmic contacts to the upper InAs quantum well are achieved by selectively etching down to the InAs, while contacts to the lower GaSb quantum well are obtained by the depletion method. For the latter, the upper InAs quantum well is locally pinched off by top etched trenches capped with a remaining 2-3 nm InAs layer. As a result of a relatively low , applying a negative bias gate potential will create a conducting hole channel in GaSb, and hence a separate ohmic contact to the lower quantum well. This method is demonstrated with experiment and the support of a self-consistent band bending calculation. A number of experiments on separately probing Coulomb and tunnel-coupled InAs/GaSb systems now become accessible.
References in corpus (34)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Intrinsic quantized anomalous Hall effect in a moiré heterostructure
- Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices
- Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
- Bose-Einstein Condensation of Excitons in Bilayer Electron Systems
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Tunable Correlated Chern Insulator and Ferromagnetism in Trilayer Graphene/Boron Nitride Moiré Superlattice
- Electric Field Tunable Correlated States and Magnetic Phase Transitions in Twisted Bilayer-Bilayer Graphene
- Abundance of correlated insulating states at fractional fillings of WSe/WS moiré superlattices
- Spin-polarized Correlated Insulator and Superconductor in Twisted Double Bilayer Graphene
- Evidence for a Goldstone Mode in a Double Layer Quantum Hall System
- Strong Coulomb drag and broken symmetry in double-layer graphene
- Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
- Correlated Insulating States at Fractional Fillings of the WS2/WSe2 Moiré Lattice
- Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing
- Excitonic superfluid phase in Double Bilayer Graphene
- Electrically tunable correlated and topological states in twisted monolayer-bilayer graphene
- Quantum Hall Drag of Exciton Superfluid in Graphene
- Exciton Condensation and Perfect Coulomb Drag
- Gate-Tuned Spontaneous Exciton Insulator in Double-Quantum Wells
- Strongly enhanced tunneling at total charge neutrality in double bilayer graphene-WSe heterostructures
- Interplay of exciton condensation and quantum spin Hall effect in InAs/GaSb bilayers
- Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
- Excitonic instability and electric-field-induced phase transition towards a two dimensional exciton condensate
- Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
- Non-local transport via edge-states in InAs/GaSb coupled quantum wells
- Nanoscale Conductivity Imaging of Correlated Electronic States in WSe2/WS2 Moiré Superlattices
- Interlayer tunneling in counterflow experiments on the excitonic condensate in quantum Hall bilayers
- Intrinsic point defects in aluminum antimonide
- Time-Reversal Symmetry-Breaking Nematic Insulators near Quantum Spin Hall Phase Transitions
- Single-edge transport in an InAs/GaSb quantum spin Hall insulator
- Extrinsic point defects in aluminum antimonide
- Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier