activity
20202026
most citedSelf-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

60 citations · 66 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2026

Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering

Ding-Ming Huang, Jun-Hang Liu, Han Gao +10

Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have im…

cond-mat.mtrl-sci2026

Single-Crystalline Al/Ge Heterostructure with an Atomically Sharp Commensurate Interface

Jian-Huan Wang, Ding-Ming Huang, Han Gao +3

A key challenge in developing Al/Ge heterostructures for quantum applications is Al-Ge interdiffusion. This process is facilitated by grain boundaries in polycrystalline films, whi…

cond-mat.mes-hall2026★ 1 cited

Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson Junctions

Han Gao, Jian-Huan Wang, Ji-Yin Wang +2

We report an experimental study of induced superconductivity in Ge hut nanowire Josephson junctions. The Ge hut nanowires are grown on prepatterned SiGe ridges via molecular beam e…

cond-mat.mes-hall2025

Atomically resolved electron reflectivity at a metal/semiconductor interface

Ding-Ming Huang, Jian-Huan Wang, Jie-Yin Zhang +3

An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling mic…

cond-mat.mes-hall2025★ 4 cited

Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy

Jian-Huan Wang, Ming Ming, Ding-Ming Huang +7

Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier…

cond-mat.mes-hall2023★ 1 cited

Realization of independent contacts in barrier-separated InAs/GaSb quantum wells

Xingjun Wu, Jianhuan Wang, Miaoling Huang +2

InAs/GaSb double quantum wells (QWs) separated by a 100 Å AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface F…

cond-mat.mes-hall2020★ 60 cited

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Fei Gao, Jian-Huan Wang, Hannes Watzinger +13

Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nano…