Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson Junctions
arXiv:2601.15659 · doi:10.1063/5.0302926
Abstract
We report an experimental study of induced superconductivity in Ge hut nanowire Josephson junctions. The Ge hut nanowires are grown on prepatterned SiGe ridges via molecular beam epitaxy (MBE) and Josephson junction devices are fabricated by contacting the nanowires with Al electrodes. Low-temperature current-bias transport measurements of the Josephson junctions are performed and the measurements show that the devices exhibit gate-tunable supercurrent and excess current. The analysis of excess current indicates that the transparency of the Ge hut nanowire Josephson junctions is as high as 85%. Voltage-bias spectroscopy measurements of the devices show multiple Andreev reflections up to the fourth order. With magnetic field and temperature-dependent measurements of the multiple Andreev reflections, the critical field and the critical temperature of the induced superconductivity in the Josephson junctions are extracted to be ~0.12 T and ~1.4 K. The success in introducing superconductivity into Ge hut nanowires will stimulate their applications in building advanced quantum processors.
References in corpus (39)
- Tunable Supercurrent Through Semiconductor Nanowires
- A four-qubit germanium quantum processor
- The germanium quantum information route
- Fast two-qubit logic with holes in germanium
- Ge hole spin qubit
- Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
- Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
- A singlet triplet hole spin qubit in planar Ge
- Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
- Gate-controlled quantum dots and superconductivity in planar germanium
- Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
- Monolithic growth of ultra-thin Ge nanowires on Si(001)
- Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction
- Multi-mode Fabry-Pérot conductance oscillations in suspended stacking-faults-free InAs nanowires
- Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
- Germanium quantum well Josephson field effect transistors and interferometers
- Parity-conserving Cooper-pair transport and ideal superconducting diode in planar Germanium
- Operating semiconductor quantum processors with hopping spins
- Majorana Fermions in Ge/Si Hole Nanowires
- Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
- Hard superconducting gap in germanium
- Enhancement of Proximity Induced Superconductivity in a Planar Ge Hole Gas
- Lightly-strained germanium quantum wells with hole mobility exceeding one million
- Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium
- Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot
- Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires
- A gate tunable transmon qubit in planar Ge
- Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
- Majorana zero modes in gate-defined germanium hole nanowires
- Majorana bound states in germanium Josephson junctions via phase control
- A quantum dot in germanium proximitized by a superconductor
- Gatemon qubit on a germanium quantum-well heterostructure
- Supercurrent parity-meter in a nanowire Cooper-pair transistor
- Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields
- Microscopic analysis of proximity-induced superconductivity and metallization effects in superconductor-germanium hole nanowires
- Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions
- Impact of junction length on supercurrent resilience against magnetic field in InSb-Al nanowire Josephson junctions
- Tunable superconducting diode effect in higher-harmonic InSb nanosheet interferometers
- Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy