Multi-mode Fabry-Pérot conductance oscillations in suspended stacking-faults-free InAs nanowires
arXiv:1005.0229 · doi:10.1021/nl101522j
Abstract
We report on observation of coherent electron transport in suspended high-quality InAs nanowire-based devices. The InAs nanowires were grown by low-temperature gold-assisted vapor-liquid-solid molecular-beam-epitaxy. The high quality of the nanowires was achieved by removing the typically found stacking-faults and reducing possible Au incorporation. Minimizing substrate-induced scattering in the device was achieved by suspending the nanowires over predefined grooves. Coherent transport involving more than a single one-dimensional mode transport, was observed in the experiment, manifested by Fabry-Pérot conductance oscillations. The length of the Fabry-Pérot interferometer, deduced from the period of the conductance oscillations, was found to be close to the physical length of the device. The high oscillations visibility imply nearly ballistic electron transport through the nanowire.
This manuscript has been withdrawn on request of Nano Letters Editorial Office
References in corpus (12)
- Tunable Supercurrent Through Semiconductor Nanowires
- Supercurrent reversal in quantum dots
- Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
- Gate capacitance of back-gated nanowire field-effect transistors
- Suppression of spin relaxation in an InAs nanowire double quantum dot
- Kondo-Enhanced Andreev Tunneling in InAs Nanowire Quantum Dots
- Magnetotransport properties of individual InAs nanowires
- Kondo physics in tunable semiconductor nanowire quantum dots
- Magnetic states in prismatic core multishell nanowires
- Andreev reflection versus Coulomb blockade in hybrid semiconductor nanowire devices
- Analyzing capacitance-voltage measurements of vertical wrapped-gated nanowires
- Dynamics of coupled spins in quantum dots with strong spin-orbit interaction