Gate tunable parallel double quantum dot in InAs double-nanowire junctions

Abstract

We report fabrication and measurement of a device where closely-placed two parallel InAs nanowires (NWs) are contacted by source and drain normal metal electrodes. Established technique includes selective deposition of double nanowires onto a previously defined gate region. By tuning the junction with the finger bottom gates, we confirmed the formation of parallel double quantum dots, one in each NW, with a finite electrostatic coupling between each other. With the fabrication technique established in this study, devices proposed for more advanced experiments, such as Cooper-pair splitting and the observation of parafermions, can be realized.

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Cited by in corpus (8)

• Cooper-pair splitting in two parallel InAs nanowires
• Observation of nonlocal Josephson effect on double InAs nanowires
• Half-Integer Shapiro Steps in a Short Ballistic InAs Nanowire Josephson Junction
• Anomalous modulation of Josephson radiation in nanowire-based Josephson junctions
• Quasiparticle trapping at vortices producing Josephson supercurrent enhancement
• Transport signatures of topological phases in double nanowires probed by spin-polarized STM
• Aharonov-Bohm and Aharonov-Casher effects for local and nonlocal Cooper pairs
• Aharonov-Bohm and Aharonov-Casher effects in double quantum dot Josephson junction