Tunable few electron quantum dots in InAs nanowires

Abstract

Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.

8 pages, 4 figures

References in corpus (9)

• Quantum Computation with Quantum Dots
• Electron transport through double quantum dots
• Electron Cotunneling in a Semiconductor Quantum Dot
• Coherent Single Charge Transport in Molecular-Scale Silicon Nanowire Transistors
• Single-electron tunneling in InP nanowires
• Universal Quantum Computation through Control of Spin-Orbit Coupling
• Spin-Orbit Coupling and Time-Reversal Symmetry in Quantum Gates
• Spin-orbit-driven coherent oscillations in a few-electron quantum dot
• Observation of one electron charge in an enhancement-mode InAs single electron transistor at 4.2K

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• Counting Statistics of Single Electron Transport in Bilayer Graphene Quantum Dots
• Spin-to-Charge Conversion of Mesoscopic Spin Currents
• Spin relaxation in an InAs quantum dot in the presence of terahertz driving fields
• Gate tunable parallel double quantum dot in InAs double-nanowire junctions
• Development and operation of research-scale III-V nanowire growth reactors
• Spin-vibronics in interacting nonmagnetic molecular nanojunctions
• Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise
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