Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate

Abstract

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

arXiv comment14 pages, 5 figures

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Cited by in corpus (3)

• Evidence for $\pi$-shifted Cooper quartets and few-mode transport in PbTe nanowire three-terminal Josephson junctions
• Enhanced Thermoelectricity in Nanowires with inhomogeneous Helical states
• Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate