Electrical control over single hole spins in nanowire quantum dots

Abstract

Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes.

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Cited by in corpus (73)

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• Hole Spin Coherence in a Ge/Si Heterostructure Nanowire
• Nanowire quantum dots tuned to atomic resonances
• Quadrupolar induced suppression of nuclear spin bath fluctuations in self-assembled quantum dots
• Recent advances in hole-spin qubits
• Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot
• Subharmonic transitions and Bloch-Siegert shift in electrically driven spin resonance
• Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
• Conductance behavior in nanowires with spin-orbit interaction -- A numerical study
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• Anisotropic Pauli spin blockade in hole quantum dots
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• Experiments on thermoelectric properties of quantum dots
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• Quantum Computing with Acceptor Spins in Silicon
• Electrical control of the Zeeman spin splitting in two-dimensional hole systems
• Spin blockade as a probe of Zeeman interactions in hole quantum dots
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• Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
• Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Quantum control of hole spin qubits in double quantum dots
• Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy
• Interplay between energy dissipation and reservoir-induced thermalization in nonequilibrium quantum nanodevices
• Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure
• Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
• Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction
• Charge-noise induced dephasing in silicon hole-spin qubits
• Si CMOS Platform for Quantum Information Processing
• Probing individual split Cooper-pairs using the spin qubit toolkit
• Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
• All electrically controlled quantum gates for single heavy hole spin qubits
• Classification and magic magnetic-field directions for spin-orbit-coupled double quantum dots
• Ballistic quantum transport through Ge/Si core/shell nanowires
• Anisotropic exchange coupling in a nanowire double quantum dot with strong spin-orbit coupling
• Gate defined quantum dot realized in a single crystalline InSb nanosheet
• The ubiquitous problem of learning system parameters for dissipative two-level quantum systems: Fourier analysis versus Bayesian estimation
• Spin and Orbital Spectroscopy in the Absence of Coulomb Blockade in Lead Telluride Nanowire Quantum Dots
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Strongly Interacting Holes in Ge/Si Nanowires
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• Single-charge occupation in ambipolar quantum dots
• Low-temperature environments for quantum computation and quantum simulation
• Line Shapes of Electric Dipole Spin Resonance in Pauli Spin Blockade
• Improving reproducibility of quantum devices with completely undoped architectures
• Maximizing the purity of a qubit evolving in an anisotropic environment
• Application of the Landau-Zener-Stueckelberg-Majorana dynamics in an electrically driven flip of a hole spin
• Dynamic Nuclear Polarization from Topological Insulator Helical Edge States
• Driven dynamics of a quantum dot electron spin coupled to bath of higher-spin nuclei
• Ambipolar Transport in Narrow Bandgap Semiconductor InSb Nanowires
• Electric-field-induced interferometric resonance of a one-dimensional spin-orbit-coupled electron
• Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate
• Spontaneous and resonant lifting of the spin blockade in nanowire quantum dots
• Longitudinal coupling between electrically driven spin-qubits and a resonator
• Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices
• Quantum transport in an ambipolar InSb nanowire quantum dot device
• Hole subband dispersions and strong `spin'-orbit coupling in a cylindrical Ge nanowire
• Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects
• Gate control of spin-polarized conductance in alloyed transition metal nano-contacts
• Spin splitting, Kondo correlation and singlet-doublet quantum phase transition in a superconductor-coupled InSb nanosheet quantum dot
• Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate