Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects

Abstract

Non-charge based logic in single-hole spin of semiconductor quantum dots (QDs) can be controlled by anisotropic gate potentials providing a notion for making next generation solid-state quantum devices. In this study, we investigate the isotropic and anisotropic behavior of phonon mediated spin relaxation of heavy-hole spin hot spots in QDs. For the electron spin in isotropic QDs, hot spots are known to be always present due to the Rashba spin-orbit coupling. But for heavy holes in isotropic dots, we show that the occurrences of spin hot spots are sensitive to the bulk g-factor. The hot spot for Rashba coupling in InAs and GaSb dots arises because these materials possess negative bulk g-factor, while that for the Dresselhaus coupling in GaAs and InSb dots is found due to their positive bulk g-factor. For anisotropic QDs, on the other hand, the spin hot spot is universally present due to their broken in-plane rotational symmetry. Further, the increasing electric field, that strengthens the Rashba coupling, is shown to cover a wide range of magnetic field by the hot spots. Results demonstrate that the magnetic field, choice of dot materials and size anisotropy can act as effective control parameters which can be experimentally used to design the device for detecting the phonon mediated heavy-hole spin-relaxation behavior of III-V semiconductor QDs.

15 pages, 11 figures

References in corpus (36)

• Semiconductor Spin Qubits
• Spin relaxation in semiconductor quantum dots
• Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
• Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
• Spin relaxation and decoherence of holes in quantum dots
• Electrical control of spin relaxation in a quantum dot
• A hole spin qubit in a fin field-effect transistor above 4 kelvin
• A single-hole spin qubit
• Semiconductor Quantum Computation
• Optical control of one and two hole spins in interacting quantum dots
• Electrical control over single hole spins in nanowire quantum dots
• Fluxonium: an alternative qubit platform for high-fidelity operations
• Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling
• First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors
• Large anisotropy of spin-orbit interaction in a single InAs self-assembled quantum dot
• Relaxation of hole spins in quantum dots via two-phonon processes
• Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
• Hole spin driving by strain-induced spin-orbit interactions
• Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
• Hole Spin Qubits in Ge Nanowire Quantum Dots: Interplay of Orbital Magnetic Field, Strain, and Growth Direction
• First-principles hyperfine tensors for electrons and holes in GaAs and silicon
• Quantum control of hole spin qubits in double quantum dots
• Electrical control of phonon mediated spin relaxation rate in semiconductor quantum dots: the Rashba vs the Dresselhaus spin-orbit couplings
• Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots
• Coupled superconducting spin qubits with spin-orbit interaction
• Gate control of a quantum dot single-electron spin in realistic confining potentials: anisotropy effects
• Manipulation of the Land$\acute{\text{e}}$ g-factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical and perturbation methods
• Spin dynamics in quantum dots on liquid helium
• Light-Hole Gate-Defined Spin-Orbit Qubit
• Modelling of spin decoherence in a Si hole qubit perturbed by a single charge fluctuator
• Gate control of Berry phase in III-V semiconductor quantum dots
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures
• Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot
• Coupled multiphysics, barrier localization, and critical radius effects in embedded nanowire superlattices
• Quantum Computation by Spin Parity Measurements with Encoded Spin Qubits