Manipulation of the Land$\acute{\text{e}}$ g-factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical and perturbation methods

Abstract

We study the variation in the Land$\acute{\text{e}}$ g-factor of electron spins induced by both anisotropic gate potentials and magnetic fields in InAs quantum dots for possible implementation towards solid state quantum computing. In this paper, we present analytical expressions and numerical simulations of the variation in the Land$\acute{\text{e}}$ g-factor for both isotropic and anisotropic quantum dots. Using both analytical techniques and numerical simulations, we show that the Rashba spin-orbit coupling has a major contribution in the variation of the g-factor with electric fields before the regime, where level crossing or anticrossing occurs. In particular, the electric field tunability is shown to cover a wide range of g-factor through strong Rashba spin-orbit interaction. Another major result of this paper is that the anisotropic gate potential gives quenching effect in the orbital angular momentum that reduces the variation in the E-field and B-field tunability of the g-factor if the area of the symmetric and asymmetric quantum dots is held constant. We identify level crossings and anticrossings of the electron states in the variation of the Land$\acute{\text{e}}$ g-factor. We model the wavefunctions of electron spins and estimate the size of the anticrossing for the spin states $|0,-1,+1/2>$ and $|0,0,-1/2>$ corresponding to a quantum dot that has been recently studied experimentally (Phys. Rev. Lett. \textbf{104}, 246801 (2010)).

9 pages and 8 figures

References in corpus (8)

• Coherent control of a single electron spin with electric fields
• Orbital mechanisms of electron spin manipulation by an electric field
• Large anisotropy of spin-orbit interaction in a single InAs self-assembled quantum dot
• Controlling Spin Qubits in Quantum Dots
• Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors
• Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate
• Manipulation of single electron spin in a GaAs quantum dot through the application of geometric phases: The Feynman disentangling technique
• Anisotropic spin relaxation in quantum dots

Cited by in corpus (8)

• Electrical control of phonon mediated spin relaxation rate in semiconductor quantum dots: the Rashba vs the Dresselhaus spin-orbit couplings
• Finite difference method for the arbitrary potential in two dimensions: application to double/triple quantum dots
• Gate control of Berry phase in III-V semiconductor quantum dots
• The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots
• Geometric spin manipulation in semiconductor quantum dots
• Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices
• Spin transition rates in nanowire superlattices: Rashba spin-orbit coupling effects
• Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects