Anisotropic electron g-factor in quantum dots with spin-orbit interaction

Abstract

g-factor tuning of electrons in quantum dots is studied as function of in-plane and perpendicular magnetic fields for different confinements. Rashba and Dresselhaus effects are considered, and comparison is made between wide- and narrow-gap materials. The interplay between magnetic fields and intrinsic spin-orbit coupling is analyzed, with two distinct phases found in the spectrum for GaAs in perpendicular field. The anisotropy of the g-factor is reported, and good agreement with available experimental findings is obtained.

5 pages, 4 figs. (higher resol. figs. under request)

References in corpus (5)

• Zeeman energy and spin relaxation in a one-electron quantum dot
• Orbital mechanisms of electron spin manipulation by an electric field
• Gate control of spin dynamics in III-V semiconductor quantum dots
• Spin-orbit coupling and intrinsic spin mixing in quantum dots
• Renormalization of spin-orbit coupling in quantum dots due to Zeeman interaction

Cited by in corpus (11)

• Spin properties of single electron states in coupled quantum dots
• Path-integral Monte Carlo simulations for interacting few-electron quantum dots with spin-orbit coupling
• Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate
• Oscillatory spin relaxation rates in quantum dots
• Landau level mixing by full spin-orbit interactions
• Gate control of a quantum dot single-electron spin in realistic confining potentials: anisotropy effects
• Enhanced Rashba effect for hole states in a quantum dot
• Manipulation of the Land$\acute{\text{e}}$ g-factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical and perturbation methods
• Spin-orbit-enhanced Wigner localization in quantum dots
• Anisotropic spin splitting of the electron ground state in InAs quantum dots
• Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity