Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity
arXiv:cond-mat/0509568 · doi:10.1103/PhysRevB.73.085310
Abstract
The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing deformation potential may also result in a suppression of the spin relaxation rate. For larger quantum dots, the interplay between the spin orbit interaction and Zeeman levels causes the suppression of the relaxation at several points. Furthermore, a crossover from confined to bulk-like systems is obtained by varying the width of the slab.
5 pages, 4 figures, to apper in Phys. Rev. B (2006)
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