Gate control of a quantum dot single-electron spin in realistic confining potentials: anisotropy effects
arXiv:0811.4201 · doi:10.1103/PhysRevB.79.195307
Abstract
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical simulations of such spins in single electron devices for realistic (asymmetric) confining potentials in two-dimensional electrostatically confined quantum dots. Using analytical and numerical techniques we show that breaking the in-plane rotational symmetry of the confining potential leads to a significant effect on the tunability of the g-factor with applied gate potentials. In particular, anisotropy extends the range of tunability to larger quantum dots.
7 pages, 13 figures
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- Finite difference method for the arbitrary potential in two dimensions: application to double/triple quantum dots
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- The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots
- Geometric spin manipulation in semiconductor quantum dots
- Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices
- Spin-orbit interaction in three-dimensionally bounded semiconductor nanostructures
- Spin transition rates in nanowire superlattices: Rashba spin-orbit coupling effects
- Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects