Electrically tunable g-factors in quantum dot molecular spin states

Abstract

We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals.

5 pages, 5 figures, Accepted by Phys. Rev. Lett. New version reflects response to referee comments

References in corpus (3)

• Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
• Optically Probing Spin and Charge Interactions in an Tunable Artificial Molecule
• Spin transfer and coherence in coupled quantum wells

Cited by in corpus (7)

• Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate
• Size dependent exciton g-factor in self-assembled InAs/InP quantum dots
• Strong Electron-Hole Exchange in Coherently Coupled Quantum Dots
• Fine structure and optical pumping of spins in individual semiconductor quantum dots
• Exciton spectra in vertical stacks of triple and quadruple quantum dots in an electric field
• Optical Spin Initialization and Non-Destructive Measurement in a Quantum Dot Molecule
• Antibonding ground states in semiconductor artificial molecules