Size dependent exciton g-factor in self-assembled InAs/InP quantum dots

Abstract

We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning Tunneling Microscopy measurements have been performed and support the interpretation of the macro photoluminescence spectra. More than 160 individual quantum dots have systematically been investigated by analyzing single dot magneto-luminescence between 1200nm and 1600 nm. We demonstrate a strong dependence of the exciton g-factor on the height and diameter of the quantum dots, which eventually gives rise to a sign change of the g-factor. The observed correlation between exciton g-factor and the size of the dots is in good agreement with calculations. Moreover, we find a size dependent anisotropy splitting of the exciton emission in zero magnetic field.

15 pages, 7 figures

References in corpus (6)

• Quantum Computation with Quantum Dots
• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
• Electrically tunable g-factors in quantum dot molecular spin states
• g-factor engineering and control in self-assembled quantum dots
• Quantum-dot spin qubit and hyperfine interaction

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• Exciton Footprint of Self-assembled AlGaAs Quantum Dots in Core-Shell Nanowires
• Strain and band-mixing effects on the excitonic Aharonov-Bohm effect in In(Ga)As/GaAs ringlike quantum dots
• Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm
• Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths
• Effect of electron-hole separation on optical properties of individual Cd(Se,Te) Quantum Dots
• Spin properties in droplet epitaxy-grown telecom quantum dots