Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm

Abstract

Exciton spin and related optical polarization in self-assembled InAs/In${}_{0.53}$Ga${}_{0.23}$Al${}_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pumping conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pumping scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, can lead to the polarization degree above 50%. We discuss the role of intrinsic asymmetries in the quantum dash that influence values of the degree of polarization and its time evolution.

arXiv comment4 pages, 3 figures

References in corpus (6)

• Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
• Highly-reduced Fine-structure splitting in InAs/InP quantum dots offering efficient on-demand 1.55 $\mu$m entangled photon emitter
• Carrier trapping and luminescence polarization in quantum dashes
• Size dependent exciton g-factor in self-assembled InAs/InP quantum dots
• Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
• Tuning the exciton g-factor in single InAs/InP quantum dots

Cited by in corpus (4)

• Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures
• Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
• Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers
• Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths