Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures
arXiv:1709.07323 · doi:10.1103/PhysRevB.96.245425
Abstract
We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry- and size-driven effects, we illustrate them with a detailed analysis of InAs/AlGaInAs/InP elongated quantum dots. These offer a widely varied confinement characteristics tuned by size and geometry that are tailored during the growth process, which leads to emission in the application-relevant spectral range of 1.25-1.65 μm. By exploring the interplay of the very shallow hole confining potential and widely varying structural asymmetry, we show that a transition from the strong through intermediate to even weak confinement regime is possible in nanostructures of this kind. This has a significant impact on exciton recombination dynamics and the polarization of emission, which are shown to depend not only on details of the calculated excitonic states but also on excitation conditions in the photoluminescence experiments. We estimate the impact of the latter and propose a way to determine the intrinsic polarization-dependent exciton light-matter coupling based on kinetic characteristics.
11 pages, 8 figures
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Cited by in corpus (8)
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- Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
- Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy
- Dark-bright excitons mixing in alloyed InGaAs self-assembled quantum dots
- Quantum dots as optimized chiral emitters for photonic integrated circuits
- Distributed Bragg reflector-mediated excitation of InAs/InP quantum dots emitting in the telecom C-band