Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Abstract

We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are compared to those of InAs/GaAs QDs. The main results are: (i) The alignment of emission lines of neutral exciton, charged exciton and biexciton in InAs/InP QDs is quite different from that in InAs/GaAs QDs. (ii) The hidden correlation in InAs/InP QDs is 0.7 - 0.9 meV, smaller than that in InAs/GaAs QDs. (iii) The radiative lifetimes of neutral exciton, charged exciton and biexciton in InAs/InP QDs are about twice longer than those in InAs/GaAs QDs. (v) The phase diagrams of few electrons and holes in InAs/InP QDs differ greatly from those in InAs/GaAs QDs. The filling orders of electrons and holes are shown to obey the Hund's rule and Aufbau principle, and therefore the photoluminescence spectra of highly charged excitons are very different from those of InAs/GaAs QDs.

10 pages, 11 figures

References in corpus (6)

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• Coulomb interactions in single, charged self-assembled quantum dots: radiative lifetime and recombination energy
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• Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots
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• Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

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• Atomistic theory of electronic and optical properties of InAsP/InP nanowire quantum dots
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• A new model for the recombination and radiative lifetime of trions and biexcitons in spherically shaped semiconductor nanocrystals
• Effective Passivant Pseudopotentials for semiconductors: beyond the spherical approximation
• Spin properties in droplet epitaxy-grown telecom quantum dots