InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

Abstract

Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a 30° beam divergence angle is demonstrated from a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, $g^2(0)=0.05$, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.

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Cited by in corpus (9)

• Quantum dots for photonic quantum information technology
• Bright Purcell enhanced single-photon source in the telecom O-band based on a quantum dot in a circular Bragg grating
• Position-controlled Telecom Single Photon Emitters Operating at Elevated Temperatures
• Light-hole states in a strained quantum dot: numerical calculation and phenomenological models
• Density-controlled growth of vertical InP nanowires on Si(111) substrates
• Brightness and purity of a room-temperature single-photon source in the blue-green range
• Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
• Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring
• Single photon emitters in thin GaAsN nanowire tubes grown on Si