activity
20042023
most citedWhy does wurtzite form in nanowires of III-V zinc-blende semiconductors?

739 citations · 1.2k across the 30 of their papers we have counts for

collaborators

30 papers

quant-ph2023

Highly photostable Zn-treated halide perovskite nanocrystals for efficient single photon generation

Marianna D'Amato, Lucien Belzane, Corentin Dabard +6

Achieving pure single-photon emission is essential for a range of quantum technologies, from optical quantum computing to quantum key distribution to quantum metrology. Among solid…

cond-mat.mtrl-sci2022★ 10 cited

STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si B

G. Hallais, G. Patriarche, L. Desvignes +2

We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribu…

cond-mat.mtrl-sci2022

Wetting of Ga droplets in SiO/Si cavities: Application to self-assisted GaAs nanowire growth

Louis Bailly-Salins, Marco Vettori, Thomas Dursap +4

In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations…

cond-mat.mtrl-sci2022★ 29 cited

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Alexandre Heintz, Bouraoui Ilahi, Alexandre Pofelski +7

A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functi…

physics.optics2022

Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths

Konstantinos Pantzas, Sylvain Combrié, Myriam Bailly +11

A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical se…

cond-mat.mes-hall2022

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Debora Pierucci, Aymen Mahmoudi, Mathieu Silly +10

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we rep…