Zinc-Blende group III-V/group IV epitaxy: importance of the miscut

Abstract

Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.

References in corpus (2)

• A universal description of III-V/Si epitaxial growth processes
• Toward III-V/Si co-integration by controlling biatomic steps on hydrogenated Si(001)

Cited by in corpus (6)

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• Determination of III-V/Si absolute interface energies: impact on wetting properties
• Inevitable Si surface passivation prior to III-V/Si epitaxy: A strong impact on wetting properties
• Higher-order topological insulator in cubic semiconductor quantum wells
• Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy