A universal description of III-V/Si epitaxial growth processes

Abstract

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.

arXiv commentincludes the manuscript file and the supplemental materials

References in corpus (1)

• Equilibrium nano-shape changes induced by epitaxial stress (generalised Wulf-Kaishew theorem)

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• Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
• Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy