60 citations · 117 across the 3 of their papers we have counts for
3 papers
Unlocking extreme doping and strain in epitaxial monocrystalline silicon
Léonard Desvignes, Dominique Débarre, Ludovic Largeau +8
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' p…
A universal description of III-V/Si epitaxial growth processes
I. Lucci, S. Charbonnier, L. Pedesseau +15
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stag…
Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs
F. Glas, G. Patriarche, L. Largeau +1
We present a method for the determination of the local concentrations of interstitial and substitutional Mn atoms and As antisite defects in GaMnAs. The method relies on the sensit…