activity
20182022
most citedA universal description of III-V/Si epitaxial growth processes

60 citations · 193 across the 7 of their papers we have counts for

collaborators

7 papers

physics.optics2022★ 13 cited

Ridge polariton laser: different from a semiconductor edge-emitting laser

H Souissi, M Gromovyi, T Gueye +11

We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The h…

cond-mat.mes-hall2020★ 19 cited

Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength

C. Brimont, L. Doyennette, G. Kreyder +12

We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are…

physics.app-ph2019★ 20 cited

Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +11

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in…

physics.app-ph2019★ 23 cited

III-nitride on silicon electrically injected microrings for nanophotonic circuits

Farsane Tabataba-Vakili, Stéphanie Rennesson, Benjamin Damilano +14

Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection…

physics.app-ph2019★ 49 cited

Blue Microlasers Integrated on a Photonic Platform on Silicon

Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +12

The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers in…

physics.app-ph2019★ 9 cited

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Farsane Tabataba-Vakili, Iannis Roland, Thi-Mo Tran +10

III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality…

cond-mat.mtrl-sci2018★ 60 cited

A universal description of III-V/Si epitaxial growth processes

I. Lucci, S. Charbonnier, L. Pedesseau +15

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stag…